Spin-orbit interaction and spin-dependent electron scattering in 2D channels

Author

Voskoboynikov, O. ; Huang, Hua-Chiang ; Lee, C.P. ; Tretyak, O.

Author_Institution

Dept. of Electronics Eng., Nat. Tung Univ., Hsinchu, Taiwan

fYear

2001

fDate

2001

Firstpage

60

Lastpage

64

Abstract

In this theoretical study to model spin-dependent scattering in two-dimensional channels, we consider a type of scatterers: quantum dots (antidots) located in two-dimensional channels of III-V semiconductors. General theoretical approach to the description of the spin-orbit coupling effect in the scattering is to use the spin-orbit contribution to the Hamiltonian. We calculate the differential cross section with energy and angular dependence and find a large left-right asymmetry. Our theory predicts that the asymmetry can reach ~10% for back-scattered electrons in the case when the electrons are scattered from two-dimensional quantum antidots

Keywords

III-V semiconductors; electron spin polarisation; semiconductor quantum dots; spin Hamiltonians; spin-orbit interactions; III-V semiconductor; angular dependence; differential cross-section; electron backscattering; energy dependence; left-right asymmetry; quantum antidot; quantum dot; spin Hamiltonian; spin-dependent electron scattering; spin-orbit interaction; two-dimensional channel; Boundary conditions; Conducting materials; Electrons; Optical scattering; Particle scattering; Quantum dots; Quantum mechanics; Schrodinger equation; Stationary state; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966394

Filename

966394