Title :
Preparation and Characterization of High Quality Lead-free BiFeO3 Thin Films by Sputtering Process
Author :
Nakashima, S. ; Takada, Yasuhiro ; Ito, Takao ; Seto, Shinta ; Fujisawa, Hiroyuki ; Kobune, M. ; Shimizu, Maiko
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Hyogo, Himeji, Japan
Abstract :
BiFeO3 (BFO) thin films have been prepared on SrTiO3 (001) single crystal substrates by sputtering process which is suitable for mass production. Domain structure can be controlled by off-cut angle and direction of SrTiO3 substrates. A lateral PFM and a XRD reciprocal space mapping results reveal the BFO thin film on SrTiO3 (001) with 4° off-cut along [110] is single domain. The single domain BFO shows well-saturated ferroelectric D-E hysteresis loops at R.T.
Keywords :
X-ray diffraction; bismuth compounds; ferroelectric thin films; sputter deposition; BFO thin films; BiFeO3; SrTiO3; XRD reciprocal space mapping; conventional RF planar magnetron sputtering process; deposition process; domain structure; dual ion beam sputtering; ferroelectric D-E hysteresis loops; high-quality lead-free thin film characterization; high-quality lead-free thin film preparation; lateral PFM; mass production; single-crystal substrates; BiFeO3; RF sputtering; ion beam sputtering; thin film;
Conference_Titel :
Emerging Trends in Engineering and Technology (ICETET), 2012 Fifth International Conference on
Conference_Location :
Himeji
Print_ISBN :
978-1-4799-0276-7
DOI :
10.1109/ICETET.2012.12
