Title :
High performance InP-based phototransistors for long wavelength, HBT-based optical receivers
Author :
Frimel, S.M. ; Roenker, K.P. ; Stanchina, W.E. ; Sun, H.C.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Abstract :
The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device´s high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical receivers; phototransistors; 50 GHz; HBT-based optical receivers; InAlAs-InGaAs; base bias; frequency performance; frontside optical injection; optical gain; phototransistors; Frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Optical devices; Optical receivers; Performance gain; Photodetectors; Phototransistors; Stimulated emission;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722658
