DocumentCode
1908989
Title
New anti-punchthrough design for buried channel PMOSFET
Author
Son, Jeonghwan ; Lee, Seungho ; Huh, Kijae ; Yang, Wouns ; Lee, Youngjong ; Hwang, Jeongmo
Author_Institution
LG Semicon Co., Ltd.
fYear
1997
fDate
22-24 September 1997
Firstpage
232
Lastpage
235
Keywords
Boron; CMOS technology; Counting circuits; Degradation; Digital audio players; Doping; Electrodes; Etching; MOSFET circuits; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194408
Filename
1503338
Link To Document