DocumentCode :
1908989
Title :
New anti-punchthrough design for buried channel PMOSFET
Author :
Son, Jeonghwan ; Lee, Seungho ; Huh, Kijae ; Yang, Wouns ; Lee, Youngjong ; Hwang, Jeongmo
Author_Institution :
LG Semicon Co., Ltd.
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
232
Lastpage :
235
Keywords :
Boron; CMOS technology; Counting circuits; Degradation; Digital audio players; Doping; Electrodes; Etching; MOSFET circuits; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194408
Filename :
1503338
Link To Document :
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