Title :
Manufacturability of 3D-Epitaxial-Lateral-Overgrowth CMOS Circuits with Three Stacked Channels
Author :
Roos, Gerhard ; Hoefflinger, Bernd ; Schubert, Martin ; Zingg, René
Author_Institution :
Institute for Microelectronics Stuttgart, IMS, Allmandring 30a, D-7000 Stuttgart 80, Germany
Abstract :
Epitaxial lateral overgrowth of Si over oxide has been perfected to yield dual-gate transistor stacks with three stacked channels providing high and matched transconductances. Threshold voltage with standard deviation ranging from 50mV to 110mV allow complex 3D logic circuits like parallel multipliers.
Keywords :
Epitaxial growth; Logic circuits; MOS devices; MOSFETs; Manufacturing; Microelectronics; Plasma chemistry; Silicon; Threshold voltage; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
