Title :
Experimental studies on field emission characteristic of graphite
Author :
Zhao, K. ; She, J.C. ; Deng, S.Z. ; Jun Chen ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou, China
Abstract :
In the present paper, detail experimental studies on field electron emission characteristic of graphite nano-tip were reported. A precursor-free plasma enhanced chemical vapor deposition (PECVD) process was developed for graphite nano-tip arrays growth. N-type <100> Si chips were used as substrates. Scanning electron microscopy (SEM) observation results indicated that the tips were grown vertically on the substrate surface. The tip height and radius are typically /spl sim/100 nm and/spl sim/10 nm, respectively. Further transmission electron microscopy (TEM) image and electron microscopy (TEM) image and electron diffraction pattern demonstrated that the graphite nano-tip is crystalline graphite. The field emission properties of the graphite nano-tip arrays were measured in an ultra-high vacuum (10/sup -8/torr) chamber. A steel anode probe was employed for the testing. The testing results indicated that the graphite nano-tip arrays typically have relatively lower threshold field for field electron emission. Possible growth mechanisms of the graphite nano-tip and the effects of the tip morphology on the field emission properties were discussed.
Keywords :
electron diffraction; electron field emission; graphite; nanostructured materials; plasma CVD; scanning electron microscopy; transmission electron microscopy; 10 nm; 100 nm; C; PECVD; SEM; Si; Si chips; TEM; crystalline graphite; electron diffraction pattern; electron microscopy image; field electron emission; field emission properties; graphite; graphite nanotip arrays growth; plasma enhanced chemical vapor deposition; scanning electron microscopy; substrate surface; tip morphology; transmission electron microscopy; Chemical vapor deposition; Crystallization; Diffraction; Electron emission; Plasma chemistry; Plasma properties; Scanning electron microscopy; Surface morphology; Testing; Transmission electron microscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223033