Title :
Lateral Channel Doping Engineering in 0.1um Recessed Channel nMOSFETs
Author :
Lyu, Jeongho ; Choi, Youngjin ; Park, Byung-Gook ; Chun, Kukjin ; Lee, Jong Duk
Author_Institution :
Seoul National University, Korea
fDate :
22-24 September 1997
Keywords :
Degradation; Doping profiles; Fabrication; Immune system; MOSFETs; Medical simulation; Semiconductor device doping; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194409
