Title :
In situ pseudo-MOS transistor in as-grown silicon on insulator wafers
Author :
Williams, S. ; Cristoloveanu, S.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (UA-CNRS), INPG, ENSERG, BP 257, 38016 Grenoble Cedex, France.
Abstract :
As-grown silicon on insulator materials are analysed using an in situ pseudo-MOS transistor. The measurement set-up and typical transistor characteristics are discussed. Fundamental parameters relating to the Si film, buried oxide and Si-SiO2 interface can be extracted from the operational curves of the pseudo-MOS transistor.
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
