Title :
Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing
Author :
Wilk, G.D. ; Green, M.L. ; Ho, M.-Y. ; Busch, B.W. ; Sorsch, T.W. ; Klemens, F.P. ; Brijs, B. ; van Dover, R.B. ; Kornblit, A. ; Gustafsson, T. ; Garfunkel, E. ; Hillenius, S. ; Monroe, D. ; Kalavade, P. ; Hergenrother, J.M.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.
Keywords :
CVD coatings; annealing; dielectric thin films; hafnium compounds; leakage currents; semiconductor technology; ALD HfO/sub 2/ films; amorphous Hf-Al-O sputtered film; chemical oxide underlayers; film growth; fixed charge; flatband voltage control; flatband voltage shifts; high-/spl kappa/ stacks; interfacial oxide growth; leakage currents; n/sup +/ poly-Si gates; optimized annealing conditions; optimized post-annealing; Annealing; Atherosclerosis; Atomic layer deposition; Channel bank filters; Chemical vapor deposition; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Voltage control;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015401
