Title :
Detailed Matching Analysis of Sub-50 nm-MOS-Transistors
Author :
Horstmann, J.T. ; Hilleringmann, U. ; Goser, K.
Author_Institution :
University of Dortmund, Germany
fDate :
22-24 September 1997
Keywords :
Doping; Electric variables measurement; Etching; Fluctuations; Geometry; Lithography; Reproducibility of results; Solid modeling; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194410
