A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket

Author

Guegan, G. ; Deleonibus, S. ; Tedesco, S. ; Dal´zotto, B. ; Heitzmann, M. ; Roussin, J.C. ; Martin, F. ; Caillat, C.

Author_Institution

LETI/CEA, Grenoble, France

fYear

1997

fDate

22-24 September 1997

Firstpage

244

Lastpage

247

Keywords

Boron; CMOS process; Diodes; Doping profiles; Gallium compounds; Indium; Ion implantation; Leakage current; MOSFET circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194411

Filename

1503341

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