Title :
Self-aligned metallization of high-frequency BJT ´ s with low-stress silicon-nitride spacers
Author :
van Zeijl, H.W. ; Nanver, L.K.
Author_Institution :
Delft University of Technology, The Netherlands
Keywords :
Annealing; Electrodes; Etching; Metallization; Planarization; Plasma applications; Resists; Silicon compounds; Stress; Surfaces;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Conference_Location :
Stuttgart, Germany
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194412