DocumentCode :
1909121
Title :
Self-aligned metallization of high-frequency BJT ´ s with low-stress silicon-nitride spacers
Author :
van Zeijl, H.W. ; Nanver, L.K.
Author_Institution :
Delft University of Technology, The Netherlands
fYear :
1997
fDate :
22-24 Sept. 1997
Firstpage :
248
Lastpage :
251
Keywords :
Annealing; Electrodes; Etching; Metallization; Planarization; Plasma applications; Resists; Silicon compounds; Stress; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Conference_Location :
Stuttgart, Germany
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194412
Filename :
1503342
Link To Document :
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