DocumentCode :
1909218
Title :
Thinning Oxide-Nitride-Oxide Interpoly Dielectric (11-13nm) for 0.25 um Flash Cell Memories
Author :
Candelier, P. ; Salvo, B. De ; Martin, F. ; Guillaumot, B. ; Mondon, F. ; Reimbold, G.
Author_Institution :
LETI-CEA Grenoble, France
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
264
Lastpage :
267
Keywords :
Capacitors; Charge carrier processes; Charge carriers; Current density; Dielectric losses; MONOS devices; Temperature; Transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194416
Filename :
1503346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909218
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