• DocumentCode
    1909234
  • Title

    Contact metallurgy optimization for ohmic contacts to InP

  • Author

    Clausen, Thomas ; Pedersen, Ame Skyggebjerg ; Leistiko, Otto

  • Author_Institution
    Microelectronics Centre, Techn. Univ. of Denmark, Build. 348, DK-2800 Lyngby
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    157
  • Lastpage
    160
  • Abstract
    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowest value of 7×10-8 ¿cm2 for n-InP occurred after RTA for 20 sec. at 450°C. For p-InP (Zn:5×1018 cm-3) the lowest value of rc, 7×10-6 ¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.
  • Keywords
    Annealing; Contact resistance; Gold; Heat treatment; Indium phosphide; Metallization; Microelectronics; Ohmic contacts; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909234