Title :
A silicon gated field edge cathode
Author :
Dyuzhev, N.A. ; Beliaev, S.N. ; Vlasenko, V.A. ; Gogin, A.A. ; Gontar, V.M. ; Deniskin, V.V. ; Mazaev, A.A. ; Nevsky, A.B. ; Tishin, Y.I. ; Shokin, A.N.
Abstract :
In this paper, we discuss the peculiarities of the design and technology of the Silicon Gated Field Edge Cathode on the hole silicon. Such cathodes have been formed with the help of the CMOS technology of plasma etching with the thermal oxidation.
Keywords :
cathodes; elemental semiconductors; oxidation; silicon; sputter etching; CMOS technology; Si; hole silicon; plasma etching; silicon gated field edge cathode; thermal oxidation; Anodes; CMOS technology; Cathodes; Circuits; Cities and towns; Electron emission; Optical scattering; Silicon; Space charge; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223041
