DocumentCode :
1909272
Title :
Simulation and Experimental Study of Zn Outdiffusion During Epitaxial Growth of a Double Heterostructure Bipolar Transistor Structure
Author :
Paraskevopoulos, A. ; Weber, R. ; Harde, P. ; Schroeter-JanBen, H.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, Germany
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
149
Lastpage :
152
Abstract :
A model is developed describing Zn outdiffusion during epitaxial growth of a Double Heterostructure Bipolar Transistor (DHBT) structure. This model is used for the design of the highly p-doped base layer. Experimental results confirm the calculated doping profiles.
Keywords :
Bipolar transistors; Doping profiles; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Microelectronics; Semiconductor process modeling; Temperature; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435354
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909272
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