DocumentCode :
1909321
Title :
MBE-grown (Ca, Sr) F2 layers on Si (111) and GaAs (111): Electronic structure of interfaces
Author :
Afanas, V.V. ; Novikov, S.V. ; Sokolov, N.S. ; Yakovlev, N.L.
Author_Institution :
Institute of Physics, Leningrad State University, 198904, USSR
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
139
Lastpage :
142
Keywords :
Electrons; Epitaxial growth; Fabrication; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Silicon; Strontium; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435356
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909321
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