Title :
Evaluation of performance and perspectives of nanocrystal flash memories based on 3D quantum modeling
Author :
Coli, P. ; Iannaccone, G.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy
Abstract :
In this paper we evaluate, from a quantitative point of view, the electrical properties of nanocrystal flash memories, in which the floating gate of conventional flash-EEPROMs is replaced with a layer of silicon nanocrystals. We have developed a three-dimensional solver of the Poisson-Schrodinger equation based on density functional theory, with the local density approximation. In this paper we focus on the stationary electric behavior of the memory devices, focusing on the effect of nanocrystal size and density, and providing a first estimate of the effect of randomness in the nanocrystal layer
Keywords :
Poisson equation; Schrodinger equation; density functional theory; flash memories; integrated circuit modelling; nanotechnology; 3D quantum modeling; Poisson-Schrodinger equation; Si; density functional theory; local density approximation; nanocrystal density; nanocrystal flash memories; nanocrystal size; randomness; stationary electric behavior; three-dimensional solver; Dielectric substrates; EPROM; Electron traps; Flash memory; MOSFET circuits; Nanocrystals; Nonvolatile memory; Silicon; Threshold voltage; Tunneling;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966408
