Title :
Field emission characteristics Si nanostructured films fabricated by pulsed laser deposition
Author :
Shimawaki, H. ; Kasamatsu, J. ; Suzuki, Y. ; Mimura, H. ; Yokoo, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hachinohe Inst. of Technol., Japan
Abstract :
In this paper, The Si nanostructured films were deposited by the pulsed Nd:YAG laser ( the fourth harmonic, /spl lambda/=266 nm) ablation technique using an oscillating Si target. The emission characteristics were measured in a diode configuration with an external Al anode placed at 9 /spl mu/m above the tips in a vacuum of 10/sup -5/ Pa. The experimental results suggest that the Si nanostructured film with many nanoprotrusions is one of the most promising cathodes for low threshold voltage and stable emission current.
Keywords :
electron field emission; elemental semiconductors; nanostructured materials; pulsed laser deposition; semiconductor thin films; silicon; 10/sup -5/ Pa; 266 nm; Al anode; Si; Si nanostructured films; cathodes; diode configuration; field emission properties; pulsed laser deposition; stable emission current; threshold voltage; Anodes; Cathodes; Field emitter arrays; Laser ablation; Optical pulses; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223043
