Title :
Impact of localised charges present in the interfacial layer of the schottky contact in SOI MESFET
Author :
Gautam, Rajni ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhii, India
Abstract :
This paper presents an investigative study of impact of localised charges present in the interfacial layer of Schottky contact on the performance of the SOI MESFET. Change in threshold voltage can be used to extract the density of localised charges present at metal-semiconductor interface in the SOI MESFET.
Keywords :
Schottky gate field effect transistors; silicon-on-insulator; SOI MESFET; Schottky contact; density extraction; interfacial layer; localised charges; metal-semiconductor interface; CMOS integrated circuits; CMOS technology; Logic gates; MESFETs; Performance evaluation; Reliability; Stress;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188727
