Title :
Charging properties of SIPOS used as a passivation layer on silicon
Author :
Liss, B ; Lindgren, Anders ; Engström, O.
Author_Institution :
Department of Solid State Electronics, Chalmers University of Technology, S - 412 96 Göteborg, Sweden
Abstract :
The density of electron trap states and their energy distribution have been measured for SIPOS/Si interfaces. By keeping the interface at thermal equilibrium during the measurement, and avoiding the influence from electron leakage through the SIPOS layer, true trap state densities are obtained. We demonstrate that the density of states decreases with the oxygen concentration of SIPOS.
Keywords :
Aluminum; Charge carriers; Density measurement; Electron emission; Electron traps; Passivation; Photonic band gap; Silicon; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
