DocumentCode :
1909373
Title :
Strain relaxation in GeSi layers with uniform and graded composition
Author :
Jain, S.C. ; Balk, P. ; Goorsky, M.S. ; Iyer, S.S.
Author_Institution :
DIMES, T.U. Delft, P.O. Box 5053, 2600 GB Delft
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
131
Lastpage :
134
Abstract :
We have calculated inter-dislocation spacing and stain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values.
Keywords :
Annealing; Capacitive sensors; Elasticity; Germanium silicon alloys; Metastasis; Microelectronics; Plastics; Silicon germanium; Strain measurement; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435358
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909373
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