Low-voltage field emitter arrays fabricated by advanced transfer metal mold technique

Author

Nakamoto, M. ; Fukuda, K. ; Higa, M. ; Inoue, A. ; Takahashi, F. ; Honda, S.

Author_Institution

Corporate R&D Center, Toshiba Corp., Kawasaki, Japan

fYear

2003

fDate

7-11 July 2003

Firstpage

185

Lastpage

186

Abstract

In this paper, sharp, uniform, low operation voltage and highly integrated field emitter arrays (FEAs) have been developed by the advanced transfer metal mold emitter fabrication technique using the ultra precision machining, the microelectroplating, and the mechanical pressing to realize high efficient, high reliable and low-cost vacuum microelectronic devices. I-V characteristics and F-N plots of the advanced transfer metal mold organic resign FEAs exhibits low turn-on voltage value of 8 V//spl mu/ as well as the other transfer metal mold FEAs.

Keywords

electroplating; field emitter arrays; pressing; transfer moulding; I-V properties; advanced transfer metal mold technique; integrated FEA; low voltage field emitter arrays; mechanical pressing; microelectroplating; ultra precision machining; vacuum microelectronic devices; Fabrication; Field emitter arrays; Low voltage; Machining; Manufacturing; Microelectronics; Polyimides; Pressing; Resins; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223045

Filename

1223045