Title :
Low-voltage field emitter arrays fabricated by advanced transfer metal mold technique
Author :
Nakamoto, M. ; Fukuda, K. ; Higa, M. ; Inoue, A. ; Takahashi, F. ; Honda, S.
Author_Institution :
Corporate R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, sharp, uniform, low operation voltage and highly integrated field emitter arrays (FEAs) have been developed by the advanced transfer metal mold emitter fabrication technique using the ultra precision machining, the microelectroplating, and the mechanical pressing to realize high efficient, high reliable and low-cost vacuum microelectronic devices. I-V characteristics and F-N plots of the advanced transfer metal mold organic resign FEAs exhibits low turn-on voltage value of 8 V//spl mu/ as well as the other transfer metal mold FEAs.
Keywords :
electroplating; field emitter arrays; pressing; transfer moulding; I-V properties; advanced transfer metal mold technique; integrated FEA; low voltage field emitter arrays; mechanical pressing; microelectroplating; ultra precision machining; vacuum microelectronic devices; Fabrication; Field emitter arrays; Low voltage; Machining; Manufacturing; Microelectronics; Polyimides; Pressing; Resins; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223045
