Title :
An Exponentially Ramped Current Stress Method Providing a Wide Range of Dielectric Parameters
Author :
Ghezzi, P. ; Pio, F. ; Riva, C. ; Mathewson, A. ; Naughton, F. ; Sullivan, P.O.
Author_Institution :
SGS-Thomson, Central R&D, Via C.Olivetti 2, 20041 - AGRATE BRIANZA (MI) - ITALY
Abstract :
The use of an Exponentially Ramped Current Stress as an accelerated method for wafer-level tunnel oxide reliability evaluation has already been proposed, [1,2]. This paper illustrates the wide range of dielectric parameters which can be obtained from this measurement, including Charge to Breakdown, I-V and Fowler Nordheim Characteristics, Breakdown Field and Time Dependent Dielectric Breakdown.
Keywords :
Breakdown voltage; Charge measurement; Current measurement; Design for quality; Dielectric breakdown; Dielectric devices; Dielectric measurements; Electric breakdown; Stress measurement; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
