Title :
18 GHz high gain monolithically integrated InP/InGaAs PIN/HBT-Receiver
Author :
Huber, D. ; Bitter, M. ; Bauknecht, R. ; Morf, T. ; Bergamaschi, C. ; Jäckel, H.
Author_Institution :
Swiss Federal Institute of Technology (ETHZ), Zurich, Switzerland
fDate :
22-24 September 1997
Keywords :
Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Microelectronics; Optical device fabrication; Optical receivers; Optical sensors; Photodiodes; Photography;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194423
