DocumentCode
1909460
Title
Reexamination of Electron Mobility Dependence on Dopants in GaAs
Author
Köpf, Ch ; Kaiblinger-Grujin, G. ; Kosina, H. ; Selberherr, S.
Author_Institution
TU Vienna, Austria
fYear
1997
fDate
22-24 September 1997
Firstpage
304
Lastpage
307
Keywords
Charge carrier processes; Electron mobility; Fourier transforms; Gallium arsenide; Impurities; Ionization; Microelectronics; Monte Carlo methods; Scattering; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194426
Filename
1503356
Link To Document