DocumentCode
1909461
Title
Field emission from SiO/sub x/ films deposited on Si and GaAs tip arrays
Author
Evtukh, A.A. ; Litovchenko, V.G. ; Litvin, Yu.M. ; Hartnagel, H. ; Yilmazoglu, Oktay
Author_Institution
Inst. of Semicond. Phys., Nat. Acad. of Sci., Nauki, Ukraine
fYear
2003
fDate
7-11 July 2003
Firstpage
191
Lastpage
192
Abstract
We studied the deposition of SiO/sub x/ films prepared by thermal and PECVD methods, with thickness 5-10 nm, at room temperature on Si and GaAs substrates. The electron field emission into vacuum measurements (current-voltage characteristics) from surface of SiO/sub x/ films on flat substrate was observed at high voltage (570-770 V).
Keywords
electron field emission; plasma CVD coatings; silicon compounds; thin films; 293 to 298 K; 5 to 10 nm; 570 to 770 V; GaAs; GaAs tip arrays; PECVD; Si; Si substrate; SiO/sub x/; SiO/sub x/ films surface; current-voltage properties; electron field emission; room temperature; thermal method; Annealing; Electron emission; Elementary particle vacuum; Etching; Gallium arsenide; Hafnium; Nanoelectronics; Resonance; Semiconductor films; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223048
Filename
1223048
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