DocumentCode :
1909483
Title :
Selectively-Implanted Collector Profile Optimisation for High-Speed Vertical Bipolar Transistors
Author :
Peter, M.S. ; Hurkx, G.A.M. ; Timmering, C.E.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
308
Lastpage :
311
Keywords :
Bipolar transistors; Capacitance; Design methodology; Electrical resistance measurement; Implants; Laboratories; Medical simulation; Response surface methodology; Silicon carbide; US Department of Energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194427
Filename :
1503357
Link To Document :
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