Title :
Simulation of avalanche injection filamentation in MOSFET´s and IGBT´s
Author :
Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.
Author_Institution :
State Research Institute "Pulsar", Moscow
fDate :
22-24 September 1997
Keywords :
Avalanche breakdown; Boundary conditions; Conductivity; Insulated gate bipolar transistors; Isothermal processes; MOSFET circuits; Numerical simulation; Region 8; Space charge; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194429
