DocumentCode
1909528
Title
Simulation of avalanche injection filamentation in MOSFET´s and IGBT´s
Author
Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.
Author_Institution
State Research Institute "Pulsar", Moscow
fYear
1997
fDate
22-24 September 1997
Firstpage
316
Lastpage
319
Keywords
Avalanche breakdown; Boundary conditions; Conductivity; Insulated gate bipolar transistors; Isothermal processes; MOSFET circuits; Numerical simulation; Region 8; Space charge; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194429
Filename
1503359
Link To Document