Title :
Two DEG-base GaSb/InAs Hot Electron Transistors
Author :
Kawai, H. ; Funato, K. ; Taira, K. ; Nakamura, F.
Author_Institution :
Sony Corporation Research Center, 174 Fujistuka-cho, Hodogya-ku, Yokohama 240, Japan.
Abstract :
GaSb/InAs/GaSb hot electron transistors with a base thickness of 3 to 20 nm grown by MOCVD operated with a current gain above 8 at room temperature with a low current density (about 100 A cm-2). The carrier density in the InAs base increased more than one order and mobility more than twice that of the single layer InAs of 4×1016 cm-3 and 8900 cm2/Vs, due to accumulation of 2-DEG or the semiconductor-to-semimetal transition in real space at the GaSb/InAs heterojunction.
Keywords :
Charge carrier density; Contact resistance; Current density; Electrical resistance measurement; Electrons; Etching; Fabrication; MOCVD; Microelectronics; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
