Silicon vs. germanium junctionless double-gate field effect transistor

Author

Baruah, Ratul Kumar

Author_Institution

Dept. of ECE, Tezpur (Central) Univ., Tezpur, India

fYear

2012

fDate

15-16 March 2012

Firstpage

235

Lastpage

238

Abstract

In this paper, performance of 20-nm germanium symmetric double-gate junctionless transistor (DGJLT) is evaluated and compared with silicon DGJLT. The performance parameters, namely drain current (I_d), threshold voltage (V_t) drain induceed barrier lowering (DIBL), subthreshold slope (SS), transconductance/drain current ratio (G_m/I_d) and drain output conductance (G_D) are systematically investigated for n-type DGJLT with the help of extensive device simulations for silicon and germanium substrate material. Germanium DGJLT is found to have significantly overall better performance as compared to silicon DGJLT for digital and analog applications.

Keywords

elemental semiconductors; field effect transistors; germanium; silicon; DIBL; Ge; SS; Si; drain induceed barrier lowering; drain output conductance; germanium junctionless double-gate field effect transistor; germanium substrate material; n-type DGJLT; silicon junctionless double-gate field effect transistor; silicon substrate material; subthreshold slope; threshold voltage; transconductance-drain current ratio; Decision support systems; Logic gates; Random access memory; Silicon; DIBL; Double-gate transistor; junctionless transistor (JLT); scaling; subthreshold slope;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4577-1545-7

Type

conf

DOI

10.1109/ICDCSyst.2012.6188735

Filename

6188735