Title :
Silicon vs. germanium junctionless double-gate field effect transistor
Author :
Baruah, Ratul Kumar
Author_Institution :
Dept. of ECE, Tezpur (Central) Univ., Tezpur, India
Abstract :
In this paper, performance of 20-nm germanium symmetric double-gate junctionless transistor (DGJLT) is evaluated and compared with silicon DGJLT. The performance parameters, namely drain current (Id), threshold voltage (Vt) drain induceed barrier lowering (DIBL), subthreshold slope (SS), transconductance/drain current ratio (Gm/Id) and drain output conductance (GD) are systematically investigated for n-type DGJLT with the help of extensive device simulations for silicon and germanium substrate material. Germanium DGJLT is found to have significantly overall better performance as compared to silicon DGJLT for digital and analog applications.
Keywords :
elemental semiconductors; field effect transistors; germanium; silicon; DIBL; Ge; SS; Si; drain induceed barrier lowering; drain output conductance; germanium junctionless double-gate field effect transistor; germanium substrate material; n-type DGJLT; silicon junctionless double-gate field effect transistor; silicon substrate material; subthreshold slope; threshold voltage; transconductance-drain current ratio; Decision support systems; Logic gates; Random access memory; Silicon; DIBL; Double-gate transistor; junctionless transistor (JLT); scaling; subthreshold slope;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188735
