Series switched resonator based dual-band oscillator

Author

Sharma, Vivek ; Yadav, Ravinder ; Pathak, N.P.

Author_Institution

Electron. & Comput. Eng. (ECE) Dept., Indian Inst. of Technol. (IIT), Roorkee, India

fYear

2011

fDate

13-20 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

A series switched resonator based dual-band oscillator, employing single transistor, is reported. The oscillator employs a semiconductor diode, as switch, to change the resonator´s effective length, thereby, controlling the oscillator´s negative resistance to shift its output between two desired frequencies. Agilent´s Advanced Design System (ADS) in conjunction with the electromagnetic simulation tool (EMDS) were used to design the oscillator. The measured characteristics of the fabricated dual-band oscillator, operating near 5.7 GHz and 6.48 GHz, indicate constant output power levels of 4.02 dBm with second harmonic power levels being at least 12 dB below. The measured characteristics also indicate -116.3 dBc/Hz and -95.23 dBc/Hz phase noise levels at 1 MHz offset for the above mentioned two cases, respectively.

Keywords

microwave diodes; microwave oscillators; microwave resonators; microwave transistors; Agilent ADS; Agilent advanced design system; EMDS; dual-band oscillator; electromagnetic simulation tool; oscillator negative resistance; phase noise; second harmonic power level; semiconductor diode; series switched resonator; single transistor; Dual band; Microstrip; Oscillators; Resonant frequency; Switches; Switching circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

General Assembly and Scientific Symposium, 2011 XXXth URSI

Conference_Location

Istanbul

Print_ISBN

978-1-4244-5117-3

Type

conf

DOI

10.1109/URSIGASS.2011.6050491

Filename

6050491