Series switched resonator based dual-band oscillator

A series switched resonator based dual-band oscillator, employing single transistor, is reported. The oscillator employs a semiconductor diode, as switch, to change the resonator´s effective length, thereby, controlling the oscillator´s negative resistance to shift its output between two desired frequencies. Agilent´s Advanced Design System (ADS) in conjunction with the electromagnetic simulation tool (EMDS) were used to design the oscillator. The measured characteristics of the fabricated dual-band oscillator, operating near 5.7 GHz and 6.48 GHz, indicate constant output power levels of 4.02 dBm with second harmonic power levels being at least 12 dB below. The measured characteristics also indicate -116.3 dBc/Hz and -95.23 dBc/Hz phase noise levels at 1 MHz offset for the above mentioned two cases, respectively.