• DocumentCode
    1909600
  • Title

    Measurement of two-dimensional doping profiles

  • Author

    Subrahmanyan, Ravi

  • Author_Institution
    Motorola, Inc., APRDL, 3501 Ed Bluestein Blvd., MS K10, Austin, TX 78721
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    585
  • Lastpage
    592
  • Abstract
    This paper presents a brief review of methods for the measurement of two-dimensional doping profiles. The main focus is on methods that have been actually been used to measure 2D profiles with acceptable accuracy and sensitivity. A comprehensive historical review is beyond the scope of this paper, and for this the reader is referred to an earlier paper which exhaustively cites work in the 2D dopant-profile measurement area.
  • Keywords
    Area measurement; Chemicals; Doping profiles; Electrical resistance measurement; Etching; Lighting; Microelectronics; Reproducibility of results; Scanning electron microscopy; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909600