Title :
Measurement of two-dimensional doping profiles
Author :
Subrahmanyan, Ravi
Author_Institution :
Motorola, Inc., APRDL, 3501 Ed Bluestein Blvd., MS K10, Austin, TX 78721
Abstract :
This paper presents a brief review of methods for the measurement of two-dimensional doping profiles. The main focus is on methods that have been actually been used to measure 2D profiles with acceptable accuracy and sensitivity. A comprehensive historical review is beyond the scope of this paper, and for this the reader is referred to an earlier paper which exhaustively cites work in the 2D dopant-profile measurement area.
Keywords :
Area measurement; Chemicals; Doping profiles; Electrical resistance measurement; Etching; Lighting; Microelectronics; Reproducibility of results; Scanning electron microscopy; Transmission electron microscopy;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
