DocumentCode :
1909606
Title :
A new numerical method for determining the excess noise power spectrum in MOSFETs
Author :
Gatti, E. ; Longoni, A. ; Geronimo, G. De ; Geraci, A.
Author_Institution :
Politecnico di Milano, Italy
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
328
Lastpage :
331
Keywords :
Electron traps; Electrostatics; Equations; Frequency; Low-frequency noise; MOSFETs; Performance evaluation; Semiconductor device noise; Semiconductor devices; Telegraphy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194432
Filename :
1503362
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909606
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