Improved thermal stability and device performance of ultra-thin (EOT<10 /spl Aring/) gate dielectric MOSFETs by using hafnium oxynitride (HfO/sub x/N/sub y/)

Author

Chang Seok Kang ; Cho, H.-J. ; Onishi, K. ; Choi, R. ; Nieh, R. ; Goplan, S. ; Krishnan, S. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2002

fDate

11-13 June 2002

Firstpage

146

Lastpage

147

Abstract

Hafnium oxynitride (HfO/sub x/N/sub y/) film was prepared and characterized for gate dielectrics application with EOT<10 /spl Aring/ for the first time. Thermal stability and crystallization during the subsequent thermal process were improved significantly by using HfO/sub x/N/sub y/ over HfO/sub 2/. Furthermore, excellent transistor characteristics were obtained for both p and nMOSFETs.

Keywords

MOSFET; crystallisation; dielectric thin films; hafnium compounds; heat treatment; semiconductor device measurement; thermal stability; 10 angstrom; EOT; HfO/sub 2/-Si; HfO/sub x/N/sub y/ dielectric; HfON-Si; crystallization; device performance; equivalent oxide thickness; gate dielectrics; hafnium oxynitride; high-k gate dielectric; nMOSFET; pMOSFET; thermal process; thermal stability; transistor characteristics; ultra-thin gate dielectric MOSFET; Crystallization; Dielectric devices; Hafnium oxide; Hydrogen; Impurities; Leakage current; MOSFETs; Nitrogen; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015427

Filename

1015427