Title :
Potential barrier formation between closely separated quantum size film and a metal in an applied voltage
Author :
Il´chenko, L.G. ; Il´chenko, V.V.
Author_Institution :
Inst. of Surface Chem., Nat. Acad. of Sci., Kiev, Ukraine
Abstract :
In this paper, the distribution of the potential barrier V(x.U) formed between a semi-infinite metal and a superthin metallic (semi-metal or degenerate semiconductor) film with a QS electron spectrum in an external applied voltage U is calculated, using the Green´s functions of the nonlocal Poisson equation.
Keywords :
Fermi level; Green´s function methods; Poisson equation; dielectric function; semiconductor materials; semiconductor quantum dots; semiconductor quantum wells; semiconductor thin films; work function; Green´s functions; degenerate semiconductor film; dielectric function; electron spectrum; fermi level; nonlocal Poisson equation; potential barrier formation; quantum size film; semiinfinite metal; superthin metallic film; work function; Charge transfer; Chemistry; Dielectrics; Electrons; Microelectronics; Quantum dots; Semiconductor films; Shape; Vacuum systems; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223054
