Title :
Investigation of the influence of impact ionization feedback on the spatial distribution of hot carriers in an NMOSFET
Author :
Jungemann, C. ; Yamaguchi, Satarou ; Goto, H.
Author_Institution :
Fujitsu Limited, Kawasaki, Japan and University of Bremen, Germany
fDate :
22-24 September 1997
Keywords :
Charge carrier processes; Electrons; Feedback; Hot carriers; Impact ionization; MOSFET circuits; Particle scattering; Probability; Silicon; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194434
