DocumentCode
1909669
Title
Investigation of the influence of impact ionization feedback on the spatial distribution of hot carriers in an NMOSFET
Author
Jungemann, C. ; Yamaguchi, Satarou ; Goto, H.
Author_Institution
Fujitsu Limited, Kawasaki, Japan and University of Bremen, Germany
fYear
1997
fDate
22-24 September 1997
Firstpage
336
Lastpage
339
Keywords
Charge carrier processes; Electrons; Feedback; Hot carriers; Impact ionization; MOSFET circuits; Particle scattering; Probability; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194434
Filename
1503364
Link To Document