Reliable prediction of deep sub-quarter micron CMOS technology performance

Author

Palankovski, V. ; Belova, N. ; Grasser, T. ; Puchner, H. ; Aronowitz, S. ; Selberherr, S.

Author_Institution

Inst. fur Microelectron., Technische Univ. Wien, Austria

fYear

2001

fDate

2001

Firstpage

201

Lastpage

206

Abstract

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data

Keywords

CMOS integrated circuits; calibration; integrated circuit modelling; integrated circuit reliability; mixed analogue-digital integrated circuits; technology CAD (electronics); 0.13 micron; 0.25 micron; TCAD optimization; automated Technology Computer Aided Design optimization; deep sub-quarter micron CMOS technology performance; device calibration; methodology; process calibration; reliable prediction; ring oscillator speed; sub-quartermicron CMOS technologies; transient mixed-mode device/circuit simulation; two-dimensional device simulation; CMOS technology; Calibration; Circuit simulation; Computational modeling; Computer simulation; Implants; Large scale integration; Logic devices; Medical simulation; Optimized production technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966419

Filename

966419