DocumentCode :
1909709
Title :
Hot carrier effect in sub-0.1um SOI-MOSFETs
Author :
Balestra, F.
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
344
Lastpage :
347
Keywords :
Diodes; Doping profiles; Fluctuations; Geometry; Germanium silicon alloys; Heterojunctions; Hot carrier effects; Low-frequency noise; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194436
Filename :
1503366
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909709
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