Title :
Characterization of the Ionizing Radiation Sensitivity of a CCD Technology
Author :
Simone, A. ; Debusschere, I. ; Alaerts, A. ; Claeys, C.
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract :
The radiation hardness of a Charge Coupled Device (CCD) technology was characterized with respect to ionizing irradiation. Image sensors and their associated drop-in structures were exposed to ¿-rays up to a total dose of 90 krad(Si). In this paper results on CCD´s and test structures are presented and the degradation phenomena are discussed.
Keywords :
Annealing; Charge coupled devices; Current measurement; Dark current; Image sensors; Ionizing radiation; Measurement standards; Plasma temperature; Testing; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
