Title :
The Design and Characterisation of a SiGe I2L Technology
Author :
Moiseiwitsch, N.E. ; Kennedy, G.P. ; Wainwright, S. ; Ashburn, P. ; Hall, S.
Author_Institution :
University of Southampton, UK
fDate :
22-24 September 1997
Keywords :
Circuits; Electric variables measurement; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Logic devices; Photonic band gap; Propagation delay; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194437
