Title :
Hot-carrier charge trapping and reliability in high-k dielectrics
Author :
Kumar, A. ; Ning, T.H. ; Fischetti, M.V. ; Gusev, E.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper reports for the first time on hot-electron and hot-hole charge trapping in HfO/sub 2/ pFETs/nFETs and Al/sub 2/O/sub 3/ nFETs. We find that, for equivalent injected charge, trapping due to substrate hot holes in pFETs is far more severe than from holes injected by cold tunneling. Enhanced trapping due to hot electrons in the nFETs is also observed, but only in the presence of illumination. These observations are consistent with a picture in which hot holes act as a precursor for trap creation.
Keywords :
MOSFET; alumina; dielectric thin films; electron traps; hafnium compounds; hole traps; hot carriers; interface states; semiconductor device reliability; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ nFETs; FET reliability; HfO/sub 2/; HfO/sub 2/ nFETs; HfO/sub 2/ pFETs; cold tunneling; equivalent injected charge; gate leakage; high-k dielectrics; hot-carrier charge trapping; hot-electron charge trapping; hot-hole charge trapping; illumination; oxide reliability; substrate hot holes; trap creation; Capacitance-voltage characteristics; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hot carriers; Lighting; Paper technology; Substrate hot electron injection; Temperature;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015430
