Title :
ASIC implementation of frequency domain equalizer for single carrier transmission
Author :
Komatsu, Kazuhiro ; Kameda, Suguru ; Iwata, Makoto ; Tanifuji, Shoichi ; Suematsu, Noriharu ; Takagi, Tadashi ; Tsubouchi, Kazuo
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Since single-carrier (SC) transmission using frequency domain equalization (FDE) with minimum mean square error (MMSE) operates at lower peak-to-average power ratio (PAPR) than orthogonal frequency division multiplexing (OFDM), SC-FDE with MMSE is a main candidate for uplink of cellular system such as long term evolution (LTE). In this paper, an application specific integrated circuit (ASIC) chip for the SC-FDE is implemented on Taiwan Semiconductor Manufacturing Company (TSMC) 180 nm complementary metal-oxide semiconductor (CMOS). The chip size is 5.86 mm2. The power consumption is 200 mW at data rate of 4.86 Mbit/s. In the condition of 16 paths uniform power delay profile, at a bit error rate (BER) of 10-4, the degradation of measured Eb/N0 from computer simulation is found to be less than 1 dB.
Keywords :
CMOS integrated circuits; Long Term Evolution; application specific integrated circuits; cellular radio; equalisers; error statistics; mean square error methods; ASIC; BER; LTE; TSMC CMOS; Taiwan Semiconductor Manufacturing Company; application specific integrated circuit; bit error rate; cellular system; complementary metal-oxide semiconductor; frequency domain equalizer; long term evolution; minimum mean square error; peak-to-average power ratio; power 200 mW; power consumption; single carrier transmission; size 180 nm; uniform power delay profile; Application specific integrated circuits; Bit error rate; Channel estimation; Field programmable gate arrays; Frequency domain analysis; Noise; Random access memory;
Conference_Titel :
General Assembly and Scientific Symposium, 2011 XXXth URSI
Conference_Location :
Istanbul
Print_ISBN :
978-1-4244-5117-3
DOI :
10.1109/URSIGASS.2011.6050497