Title :
110 GHz cutoff frequency of ultra-thin gate oxide p-MOSFETs on [110] surface-oriented Si substrate
Author :
Momose, H.S. ; Ohguro, T. ; Kojima, K. ; Nakamura, S. ; Toyoshima, Y.
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
The DC and RF analog characteristics of ultra-thin gate oxide CMOS on [110] surface-oriented Si substrate were investigated for the first time. Gm of p-MOSFET on [110] substrate is 1.9 times greater than that on [100] substrate, even in gate oxides in a direct-tunneling regime. An extremely high cut-off frequency of 110 GHz was obtained in 0.11 /spl mu/m gate length p-MOSFET with 1.5 nm gate oxide.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; microwave field effect transistors; semiconductor device measurement; tunnelling; 0.11 micron; 1.5 nm; 110 GHz; DC characteristics; RF analog characteristics; Si; Si [110] surface-oriented substrate; cutoff frequency; direct-tunneling regime; gate oxides; transconductance; ultra-thin gate oxide CMOS; ultra-thin gate oxide p-MOSFET; Analog circuits; Cutoff frequency; Geometry; Leakage current; Logic; MOSFET circuits; Radio frequency; Substrates; Transconductance; Voltage;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015431
