DocumentCode :
1909766
Title :
A study of oxide patterning on titanium thin films using scanning probe microscopy
Author :
Tsai, Huey-Ru ; Hsieh, Tsung-Eong ; Lo, Shih-Che ; Lin, Hsi-Hsiang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2001
fDate :
2001
Firstpage :
218
Lastpage :
222
Abstract :
This work studies the fabrication of oxide patterns on titanium (Ti) thin films using scanning probe microscopy (SPM). We employed three different SPM techniques, namely, AFM in contact mode, lift mode incorporated with contact mode AFM, and STM. It was found that bias voltages, scanning speed, scanning height of the probe (for lift mode), and setpoint current (for STM) play important roles in forming the attainable oxide features. Among these three methods, contact mode AFM exhibited the best patterning efficiency and stability and this method was adopted to oxidize the I-shaped Ti films. The resistance of I-shaped specimen after anoxidization raised from 104 Ω to 10 8_109 Ω which evidenced the occurrence of oxidation in Ti
Keywords :
anodisation; atomic force microscopy; metallic thin films; oxidation; scanning tunnelling microscopy; titanium; I-shaped specimen; STM; Ti; anodization; contact mode AFM; electrical resistance; lift mode AFM; oxide patterning; scanning probe microscopy; titanium thin film; Atomic force microscopy; Lithography; Piezoelectric materials; Scanning probe microscopy; Substrates; Surface morphology; Titanium; Transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
Type :
conf
DOI :
10.1109/NANO.2001.966422
Filename :
966422
Link To Document :
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