A study of oxide patterning on titanium thin films using scanning probe microscopy

Author

Tsai, Huey-Ru ; Hsieh, Tsung-Eong ; Lo, Shih-Che ; Lin, Hsi-Hsiang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2001

fDate

2001

Firstpage

218

Lastpage

222

Abstract

This work studies the fabrication of oxide patterns on titanium (Ti) thin films using scanning probe microscopy (SPM). We employed three different SPM techniques, namely, AFM in contact mode, lift mode incorporated with contact mode AFM, and STM. It was found that bias voltages, scanning speed, scanning height of the probe (for lift mode), and setpoint current (for STM) play important roles in forming the attainable oxide features. Among these three methods, contact mode AFM exhibited the best patterning efficiency and stability and this method was adopted to oxidize the I-shaped Ti films. The resistance of I-shaped specimen after anoxidization raised from 10⁴ Ω to 10 ⁸_10⁹ Ω which evidenced the occurrence of oxidation in Ti

Keywords

anodisation; atomic force microscopy; metallic thin films; oxidation; scanning tunnelling microscopy; titanium; I-shaped specimen; STM; Ti; anodization; contact mode AFM; electrical resistance; lift mode AFM; oxide patterning; scanning probe microscopy; titanium thin film; Atomic force microscopy; Lithography; Piezoelectric materials; Scanning probe microscopy; Substrates; Surface morphology; Titanium; Transistors; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966422

Filename

966422