Title :
Low-Noise Amplifier for Mobile Communications using a Production Ready SiGe HBT Technology
Author :
Erben, U. ; Schüppen, A. ; Dietrich, H. ; Schumacher, H.
Author_Institution :
University of Ulm, Germany
fDate :
22-24 September 1997
Keywords :
Bonding; Circuit noise; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Mobile communication; Production; Silicon germanium; Working environment noise;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194438
