Title :
New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition
Author :
Imbornone, J. ; Murphy, M. ; Donahue, R.S. ; Heaney, E.
Author_Institution :
IC Bus. Unit, M/A-COM, Lowell, MA, USA
Abstract :
This paper provides new insight into the cause of subharmonic generation in GaAs MESFET power amplifiers under severe output mismatch conditions. A nonlinear modeling methodology is developed to identify the root cause of subharmonic oscillations and provides a means to implement circuit techniques to suppress this mode of oscillation without degrading the desired power amplifier performance. This modeling based technique is enabled through the use of a time domain MESFET model which achieves excellent convergence by avoiding the discontinuity in high-order derivatives that is typical of implementations that use conditional functions. This technique allows the design engineer for the first time the ability to determine apriori the large signal stability of a power amplifier operating into a severe mismatch and implement circuit solutions prior to MMIC fabrication.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; circuit oscillations; circuit stability; gallium arsenide; harmonics; impedance matching; power amplifiers; GaAs; GaAs power amplifiers; MESFET power amplifiers; large signal stability; nonlinear modeling methodology; oscillation suppression; severe output mismatch condition; subharmonic generation; subharmonic oscillation mode; time domain MESFET model; Circuit stability; Degradation; Design engineering; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Power engineering and energy; Power generation; Signal design;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567896