Title :
Effects of processing temperatures on device design rules for Silicon/Silicon Germanium heterojunction bipolar transistors
Author :
Bashir, R. ; Kabir, A.E. ; Myers, E.R. ; DeSantis, J. ; Bracken, C. ; Westrom, P. ; Wang, F.
Author_Institution :
National Semiconductor Cor., USA
fDate :
22-24 September 1997
Keywords :
Doping; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Semiconductor films; Silicon compounds; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194440
