• DocumentCode
    1909858
  • Title

    Effects of processing temperatures on device design rules for Silicon/Silicon Germanium heterojunction bipolar transistors

  • Author

    Bashir, R. ; Kabir, A.E. ; Myers, E.R. ; DeSantis, J. ; Bracken, C. ; Westrom, P. ; Wang, F.

  • Author_Institution
    National Semiconductor Cor., USA
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    360
  • Lastpage
    363
  • Keywords
    Doping; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Semiconductor films; Silicon compounds; Silicon germanium; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194440
  • Filename
    1503370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909858