Title :
A 3Ã\x973 infrared matrix sensor using PVDF on silicon
Author :
Hammes, P.C.A. ; Regtien, P.P.L.
Author_Institution :
Delft University of Technology, Department of Electrical Engineering, Lab. for Electronic Instrumentation, Mekelweg 4, 2628 CD Delft, The Netherlands.
Abstract :
The design and realisation of a 3×3 infrared matrix sensor, using PVDF, is described. The theoretical frequency response and noise behaviour of the sensor are experimentally verified. A good agreement is found between theory and measurements.
Keywords :
Capacitance; Frequency; Infrared detectors; Infrared sensors; Low-frequency noise; MOSFET circuits; Sensor phenomena and characterization; Silicon; Thermal resistance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
