Effects of quantum confinement and discrete dopants in nanoscale bulk-Si nMOSFET

Author

Fiori, G. ; Iannaccone, G.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy

fYear

2001

fDate

2001

Firstpage

248

Lastpage

253

Abstract

We have developed a numerical code for the three-dimensional simulation of ultrashort channel MOSFETs considering the effects due to quantum confinement of electrons at the Si/SiO₂ interface. We have focused on the so-called "Well tempered" bulk-Si n-MOSFETs with channel length of 90, 50 and 25 nm proposed by D. Antoniadis. We found that the effect of quantum confinement on threshold voltage is of the order of 100 mV, and therefore justifies the effort for a quantum simulation of nanoscale MOSFETs. In addition, we have evaluated the effect of the random distribution of dopants, by simulating a large number of devices with uniform nominal doping profile but with different actual microscopic distribution of impurities, and we have computed the threshold voltage dispersion for the above mentioned devices

Keywords

MOSFET; doping profiles; elemental semiconductors; semiconductor device models; silicon; 25 nm; 50 nm; 90 nm; Si-SiO₂; Si/SiO₂ interface; Well tempered device; nanoscale bulk-Si n-MOSFET; quantum confinement; quantum simulation; random dopant distribution; three-dimensional numerical simulation; threshold voltage; ultrashort channel device; Computational modeling; Dispersion; Distributed computing; Doping profiles; Electrons; Impurities; MOSFET circuits; Microscopy; Potential well; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966428

Filename

966428